2004 IMMERSION & 157nm SYMPOSIUM

 

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Proceedings

Tuesday, August 3, 2004
Topic	Presenter	File Size (Mb)	File Number
Opening remarks	Andrew Grenville	1.25	1-00
Immersion Lithography: New Opportunities for Semiconductor Manufacturing	Timothy Brunner	1.36	1-01
The Development of 193nm Immersion Exposure Tools	Hitoshi Nakano	2.32	1-02
Automated Control Technologies for Immersion Lithography	Christoph Bode	0.53	1-03
ArF Immersion Lithography for Low K1, Lines and Contacts	Geert Vandenberghe	5.40	1-04
New Structure of Monocyclic Flouropolymer for 157nm Photoresist	Masataka Eda	0.69	1-05
Fluoropolymer Resists for 157 nm and 193 nm Lithography:	Kenneth Leffew	1.40	1-06
Surface Roughness Investigation of 157nm and 193nm Polymer Platforms using different Etch Conditions	Christoph Hohle	1.07	1-07
Progress in 157nm Resist and Pattern Transfer Process	Kentaro Matsunaga	4.91	1-08
Characterization of Refractive Properties on Immersion & 157nm Lithography	Simon Kaplan	0.42	1-09
High Refractive Index Nanocomposite Liquid for 193nm Immersion Lithography	Paul Zimmerman	1.24	1-10
High Index Materials for 193nm 157nm Immersion Lithography	John Burnett	0.51	1-11
Influence of Water Immersion on Properties of Lithographic Materials	Bill Hinsberg	0.99	1-12
The PAG Leaching Phenomenon in 193nm Immersion Lithography	Ralph Dammel	2.73	1-13
Imaging Properties of ArF Immersion in Hyper-NA Region	Tokuyuki Honda	0.73	1-14
First Patterning Results with a 157nm Immersion Microstepper	Michael Switkes	4.99	1-15
Nikon Immersion Exposure Tool Development	Soichi Owa	2.19	1-16
Wednesday, August 4, 2004
Topic	Presenter	File Size (Mb)	File Number
193nm Immersion Resist Development Status	Shinichi Kanna	1.52	2-01
High Refractive Index Photoresists for 193nm Immersion Lithography	Andrew Whitaker	0.67	2-02
Characterization and Meaningful Quantification of Resist Component Leaching into Immersion Fluid	Stewart Robertson	1.37	2-03
New Cover Material Development Status for Immersion Lithography	Keita Ishizuka	0.76	2-04
Thermodynamic and Kinetic Stability of Nanobubbles at the Water-Solid Interface: A Modeling and AFM Study	Gene Parris	1.84	2-05
Review of Bubble Printability in Immersion Lithography	Laurent Marinier	0.89	2-06
Computational Modeling of Air Entrainment due to Topology for Immersion Lithography	Alex Wei	0.72	2-07
Photoresist Surface-Liquid Interface for ArF Immersion Lithography	Will Conley	1.33	2-08
193i Lab or Fab - Will sub-45nm be reaching to far?	Bruce Smith	2.30	2-09
Experimental Proof of Process Margin Extension by Using DRAM Patterns in Immersion Exposure Tool	Sung-Woo Lee	0.72	2-10
1.3 Numerical Aperture Design for 193nm	James Webb	0.78	2-11
193nm Polarization Standard	Marylyn Bennett	0.73	2-12
Experimental Characterization of Topography Induced Immersion Bubble Defects	Michael Kocsis	1.77	2-13
Lens Contamination during Immersion Lithography	Greg Nellis	0.99	2-14
Status and Outlook for Arf Immersion Lithography	Donis Flagello	2.08	2-15
Progress of 157nm Exposure Tools	Seiji Matsuura	1.99	2-16
Bubble Investigation for Immersion Lithography	Sjoerd Donders	0.68	2-17
Thursday, August 5, 2004
Topic	Presenter	File Size (Mb)	File Number
Pellicle Mounting Technology to Minimize Reticle and Pellicle Distortion	Chris Van Peski	0.63	3-01
Development of Hard Pellicle for 157nm	Kaname Okada	0.41	3-02
Analysis of the Photodegradation at 157nm of Photolithographic-Grade Teflon AF Pellicles	Andrew Whitaker	0.24	3-03
The Use of Modified Polytetraflouroethylene for 157nm and 193nm Soft Pellicles	Paul Zimmerman	1.15	3-04
Long-term 193-nm Laser Irradiation of Thin-film-Coated CaF2 in the Presence of H2O	Vladimir Liberman	0.77	3-05
Structure Composition Property Relations For 157nm Immersion Lithography Fluids	Roger French	0.69	3-06
State of the Art CaF2 Crystal Grown by the CZ Method	Teruhiko Nawata	1.74	3-07
Development of Mask Substrate for 193 Immersion	Tomohiko Satoh	0.58	3-08
Is ArF the Final Wavelength?	Will Conley	5.87	3-09
Wrap up / adjourn	Andrew Grenville	0.96	3-10

 

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Posters

Abstract Title	Main Author	Company	File Size (Mb)	File Number
Tools
High NA 157nm OPC Development for 65nm Imaging	Will Conley	Freescale/KT	5.70	A-1
Sub-0.2 pm Excimer Laser System for 193 nm Lithography	Rainer Paetzel	Lambda Physik	0.72	A-2
Two beam interferometer using a solid-state 193-nm laser	Soichi Owa	Nikon	1.38	A-3
Evaluation of Polarization Effects on High-NA Imaging at 157nm	Bruce Smith	RIT	4.40	A-4
Material alignment effects on Wavefront and birefringence	Jim Webb	Tropel	0.63	A-5
Compact fluorine lasers for metrology and inspection systems	Andreas Goetler	TuiLaser	0.20	A-6
High Power Injection Lock Laser Platform for ArF Immersion Lithography	Mizoguchi	Gigaphoton	0.27	A-7
Masks
Design and Evaluation of Novel Fluoropolymer for 157nm Pellicles	Ikuo Matsukura	Asahi Glass	0.23	B-1
Nanocomposite Polymer Pellicles for 157nm Photolithography	Igor Luzinov	Clemson	0.32	B-2
Effect of environment on 157nm soft pellicle durability	Hironao Sasaki	Selete	0.28	B-3
Optical
High Yield Growth of (111) and (100) oriented CaF2 Single Crystals	K. Sumiya	Hitachi	0.93	C-1
Amplification of the Index of Refraction of Aqueous Immersion Fluids by Ionic Surfactants	Paul Zimmerman	ISMT/ INTEL	0.43	C-2
Improvement of crystallinity on CaF2 crystals grown by the CZ method	Hiroyuki Yanagi	Tokuyama	1.02	C-3
An Angle Resolved Scattermetry in the VUV Using an Apodized Pupil Function	Ted Bloomstein	MITLL	0.23	C-4
Laser-Induced Birefringence in Modified Fused Silica: 157-nm and 193-nm Irradiation	Vladimir Liberman	MITLL	0.25	C-5
Defect Enginnering of CaF2 - the master key to achive the requirements for theh 45nm node and beyond	Guenther Grabosch	Schott	0.22	C-6
The Exicor DUV Birefringence Measurement System and it's Applications to the Optical Lithography Indsutry	Bob Wang	Hinds Instruments	0.16	C-7
New Immercion Fluids for 193nm Lithography	Peng Zhang	Air Products & Chemicals	1.94	C-8
Immersion Defects
Bubbles in Immersion Lithography	Mike Switkes	MITLL	1.18	D-1
Resists
A new microcyclic flouropolymer for 157nm photoresists	Tadashi Sasaki	Asahi Glass	0.42	E-1
Advances in the design of resist materials for 157nm Lithography: Effect of resist additives and barrier coats.	Francis Houlihan	Clariant	5.03	E-2
Investigation of Unusual Susceptability fo 157nm Resists to Airborne Molecular Contamination	Jeff Meute	IBM	2.85	E-3
ESH Assessment of Advanced Lithography materials and Processes	Walter Worth	ISMT	0.76	E-4
Removal Efficiency of Hydrocarbon in Wet and Dry XCDA Purge Gas	Allan Tram	Mykrolis	0.30	E-5
Results from an XIS-193 Excimer Immersion Microstepper	Stewart Robertson	Rohm Haas	3.45	E-6
Airborne Contamination Control for 157-nm Lithography -Influence of Ammonia Contamination 2-	Hidefumi Matsui	TEL	0.54	E-7
ArF F2 Immersion Resist	Harry Sewell	ASML	1.60	E-8