5th ISMI Symposium on Manufacturing Effectiveness
Short Course: "New Materials in Wafer Manufacturing"
Monday, October 20
1PM-5PM
Instructors: P. Kirsch, G. Smith, S. Wurm, B. Rice
This 4-hour short course will present a high-level overview of the new materials introduced, or being introduced, into semiconductor wafer manufacturing. The course will include presentations and discussion from several SEMATECH experts, and include the following topics:
- FEOL materials: n- and p- type metal electrodes, transition metal oxide gate dielectrics, epi-SiGe substrates, materials for non-volatile memories such as flash and phase change memory and DRAM
- BEOL materials: Low k dielectrics, porous low k dielectrics, dielectric barriers, metal barriers, metal nucleation layers, pore sealing materials
- Lithography materials: Atomic precision thin film technology for optics and masks, plasma based lithography sources, reticle handling and shipping technologies for pellicle-less masks, ultra thin resist materials, immersion lens materials, fluids & resists, double patterning, exposure resists
The presentations will focus on the types of materials, reasons for introduction, unique process and equipment issues, integration concerns, and manufacturing issues.
About the Instructors
Stefan Wurm is the SEMATECH EUVL Strategy Program manager. Before joining SEMATECH he has held positions in technology development and management at Siemens Semiconductors, Infineon and Qimonda. His industrial experience includes CMOS process technology, advanced equipment and process controls, magnetic random access memory development and next generation lithography. He has been on assignments to the International 300mm Initiative (I300I), EUVLLC, and SEMATECH. Fundamental research areas he has contributed to include the use of modulated optical reflectance for non-destructive metrologies and the understanding of the dynamics of electron stimulated desorption of small molecules from metal surfaces and molecular solids through quantum state resolved detection of desorbing molecules. He received his physics diploma and his doctorate in physics from the Technische Universität München, Germany.
Paul D. Kirsch received a B.S. (1995) in chemical engineering from the University of Wisconsin-Madison and Ph.D. (2001) in chemical engineering from the University of Texas at Austin. He was with IBM Systems and Technology Group from 2001 to 2007 working high performance gate stacks for bulk and silicon-on-insulator technologies. He joined the SEMATECH Front End Process team in 2007 and is currently the program manager for the advanced gate stack program. He has authored and co-authored more than 80 journal and conference papers in the various semiconductor research areas including high-k dielectrics, metal gates, high mobility channels, flash memory and DRAM. He also holds 3 patents.
Dr. Greg Smith has 28 years of experience in the semiconductor industry, mostlyin CMOS processing, but also in flat panel displays and MEMs. After receiving a PhD in Physics from The Ohio State University in 1979, he has contributed to developments in thin film electroluminescent displays, PECVD and CVD metal and dielectric deposition, and integration of advanced metallization systems, at TI, ST Microelectronics, and SEMATECH. He is currently working on integration of FinFETs and advanced planar devices in the FEP group at SEMATECH.
Who should Attend
This course is intended for process engineers, equipment engineers, yield, defect engineers, and facilities engineers.
How to Register
You must register to attend this short course. There is a registration fee of $100 for ISMI Members; $250 for all others.
