SEMATECH DOC ID #: 98093561A-ENG

Title: Evaluation of RF Environmental Systems/Texas A&M University Surface Wave Plasma Device for Abatement of Perfluorocompound (PFC) Emissions (ESHC005)

Author(s): Bill Wofford;Chris Hartz;John Bevan;Laurie Beu;Tom Lii;Victor Vartanian;

Document date: 10/14/1998

Descriptor(s): emissions reduction;perfluorocompounds;tetrafluoromethane;plasma etching;by-product characterization;Fourier transform infrared spectroscopy;quadrupole mass spectrometers;microwaves;pollution control equipment;200 mm wafers;

Abstract:  This document presents an evaluation of a prototype microwave plasma device
for destroying and removing perfluorocompounds (PFCs) and
hydrofluorocompounds (HFCs) emitted from a commercial semiconductor
manufacturing tool. An Applied Materials Centura 5200 MxP+ contact/via etcher
with standard Applied Materials' process recipes including CHF3, CF4, and
argon was used to etch 200 mm blanket TEOS, Si3N4, bare silicon, and
patterned test wafers. An Rf Environmental Systems/Texas A&M University
surface wave plasma (SWP) device was evaluated to determine its ability to
attain a destruction removal efficiency (DRE) greater than 95% under a
variety of process conditions and pressures and to determine the effect of
varying parameters, principally gas flow, chamber pressure, and gas
composition, on byproduct distribution. Patterned wafers were used to
evaluate process impact using wafer metrology. Effluent analysis by Fourier
transform infrared spectroscopy (FTIR) and quadrupole mass spectrometry (QMS)
was used to determine DRE as well as product species distribution. The study
indicated that destruction of perfluorocompounds at the point of use is a
viable, non-intrusive abatement technology for semiconductor process tools.

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